MRF6S18060NR1 MRF6S18060NBR1
3
RF Device Data
Freescale Semiconductor
Z1 0.250″
x 0.083
Microstrip
Z2* 0.950″
x 0.083
Microstrip
Z3* 0.250″
x 0.083
Microstrip
Z4* 0.315″
x 0.083
Microstrip
Z5 0.365″
x 1.000
Microstrip
Z6 0.680″
x 0.080
Microstrip
Z7, Z8 0.115″
x 1.000
Microstrip
Z9 0.485″
x 1.000
Microstrip
Z10* 0.500″
x 0.083
Microstrip
Z11* 0.895″
x 0.083
Microstrip
Z12 0.250″
x 0.083
Microstrip
Z13 0.200″
x 0.080
Microstrip
PCB Taconic TLX8-0300, 0.030″, εr
= 2.55
* Variable for tuning
Figure 1. MRF6S18060NR1(NBR1) Test Circuit Schematic ? 1900 MHz
VBIAS
RF
INPUT
RF
OUTPUT
Z1
C3
C4
Z3
DUT
Z9
Z10
Z11
C1
R3
+
C11
C9
Z2
R1
C10
VSUPPLY
R2
C5
C6
Z8
C2
Z4
Z5
Z7
Z6
Z12
Z13
C7
C8
Table 6. MRF6S18060NR1(NBR1) Test Circuit Component Designations and Values ? 1900 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C5
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C6
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C7, C8
1 pF Chip Capacitors
ATC100B1R0BT500XT
ATC
C9, C10
10 μF Chip Capacitors
C5750X5R1H106MT
TDK
C11
220 μF, 63 V Electrolytic Capacitor, Radial
2222-136-68221
Vishay
R1, R2
10 k, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10 , 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
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相关代理商/技术参数
MRF6S18060NR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NBR1 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18100NR1 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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MRF6S18140HR3 功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18140HR3_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray